Part Number | SSM3J114TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 20V 1.8A UFM |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 4V |
Input Capacitance (Ciss) (Max) @ Vds | 331pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 149 mOhm @ 600mA, 4V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | UFM |
Package / Case | 3-SMD, Flat Leads |
Image |
SSM3J114TU
TOSHBIA
18578
0.33
HK HEQING ELECTRONICS LIMITED
SSM3J114TU
TOSHI
5000000
1.3125
Hongkong Shengshi Electronics Limited
SSM3J114TU
TOSIBA
18578
2.295
Gallop Great Holdings (Hong Kong) Limited
SSM3J114TU
TOSIHBA
20000
3.2775
Yingxinyuan INT'L (Group) Limited
SSM3J114TU(T5L
TOSHIDA
61000
4.26
CIS Ltd (CHECK IC SOLUTION LIMITED)