Part Number | SSM3J108TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 20V 1.8A UFM |
Series | U-MOSIII |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 158 mOhm @ 800mA, 4V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | UFM |
Package / Case | 3-SMD, Flat Leads |
Image |
SSM3J108TU
TOSHBIA
36000
1.5
Acon Electronics Limited
SSM3J108TU
TOSHI
17585
2.55
HK HEQING ELECTRONICS LIMITED
SSM3J108TU
TOSIBA
5000000
3.6
Hongkong Shengshi Electronics Limited
SSM3J108TU
TOSIHBA
17585
4.65
Gallop Great Holdings (Hong Kong) Limited
SSM3J108TU
TOSHIDA
240000
5.7
HXY Electronics (HK) Co.,Limited