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Part Number | RN2909FE(T5LFT) |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.1W ES6 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image | ![]() |
RN2909FE(T5L,F,T)
TOSHBIA
4000
1.19
SHENZHEN QIMIWON Co.,Ltd
RN2909FE(T5LFT)
TOSHI
4000
1.58
CHIPMH Electronic Technology Co.,Ltd
RN2909FE
TOSIBA
12000
1.97
IC WELL ELECTRONICS (HK) CO., LIMITED
RN2909FE(TE85L,F)
TOSIHBA
15000
2.36
MY Group (Asia) Limited
RN2909FE(TE85L.F)
TOSHIDA
100000
2.75
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED