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Part Number | RN2111ACT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS PNP 0.1W CST3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | - |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Image | ![]() |
RN2111ACT
TOSHBIA
5000
1.7
Gallop Great Holdings (Hong Kong) Limited
RN2111ACT(TPL3)
TOSHI
15000
2.7375
MY Group (Asia) Limited
RN2111ACT
TOSIBA
10000
3.775
HK HEQING ELECTRONICS LIMITED
RN2111ACT
TOSIHBA
11000
4.8125
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN2111ACT
TOSHIDA
64000
5.85
Yingxinyuan INT'L (Group) Limited