Part Number | FQP70N10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 100V 57A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 160W (Tc) |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 28.5A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
Hot Offer
FQP70N10
TOSIHBA
9000
4.945
Kang Da Electronics Co.
FQP70N10
TOSHIDA
100000
6.05
JI Sheng (HK) Electronics Co., Limited
FQP70N10
TOSHBIA
10000
1.63
Shenzhen Taochip Electronic Co.,Ltd
FQP70N10
TOSHI
11494
2.735
Viassion Technology Co., Limited
FQP70N10
TOSIBA
4591
3.84
Belt (HK) Electronics Co