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Description
Datasheet 1SS383 . 7.5. 8.0. 8.5. 0.1. 1. 10. 100. 1000. Tr. XP151A13A0MR-. G. D1, 2. 1SS383 . VOUT +3.3 V. RFB1. 180 k . RSEN 100 m . CFB. 82pF. FB. RFB2. 68 k . -6 (VIN=2.4 3V IOUT=50mA IOUT HIGH=2mA). Tr. XP151A13A0MR. D1, 2. 1SS383 . VOUT HIGH. +9V. VOUT. +3.3V. RFB1. 180kohm. RSEN. 100mohm. 1SS383 . OnSemiconductor. SOT343. BAS40-07. SOT143. Schottky Diodes. 1SS387. Toshiba. SC79. BAS16-02V. SC79. General Purpose Diodes. 1SS387. 1SS383 ,1SS384. MA4ZD03/14. ROHM. RB480K,RB481K. HSB0104YP. 1SS402 . MA4Z713. INFINEON. Agilent. BAT62-07W. HSMS281K/282K. HSB226YP. www.renesas.com. 2006.07. Renesas Diodes/RFID Status List. . /RFID. . . .
| Part Number | 1SS383 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Diodes - Rectifiers - Arrays |
| Brand | Toshiba |
| Description | DIODE ARRAY SCHOTTKY 40V USQ |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Diode Configuration | 2 Independent |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40V |
| Current - Average Rectified (Io) (per Diode) | 100mA |
| Voltage - Forward (Vf) (Max) @ If | 600mV @ 100mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 5µA @ 40V |
| Operating Temperature - Junction | 125°C (Max) |
| Mounting Type | Surface Mount |
| Package / Case | SC-82 |
| Supplier Device Package | USQ |
| Image |  |
1SS383
TOSHBIA
5000000
1.74
Hongkong Shengshi Electronics Limited
1SS383(TE85L)
TOSHI
92790
2.85
Pivot Technology Co., Ltd.
1SS383
TOSIBA
42100
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WIN AND WIN ELECTRONICS LIMITED
1SS383
TOSIHBA
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5.07
DES TECHNOLOGY (HK) LIMITED
1SS383
TOSHIDA
16000
6.18
Yingxinyuan INT'L (Group) Limited
